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| SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION It is particularly suited for switching such as DC/DC Converters. It is driven as low as 4.5V and fast switching, high efficiency. KMB3D5PS30QA SBD and P-Ch Trench MOSFET H FEATURES VDSS=-30V, ID=-3.5A. Drain-Source ON Resistance. RDS(ON)=85m (Max.) @ VGS=-10V RDS(ON)=180m (Max.) @ VGS=-4.5V 8 T D P G L A 5 B1 B2 1 4 MOSFET Maximum Ratings (Ta=25 CHARACTERISTIC Drain Source Voltage Gate Source Voltage DC Drain Current Pulsed 25 Drain Power Dissipation 100 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note : *Sorface Mounted on FR4 Board Unless otherwise noted) SYMBOL VDSS VGSS ID * IDP PD * 1 Tj Tstg RthJA* 150 -55~150 90 /W W PATING -30 20 -3.5 -20 1.4 UNIT V V A A W DIM A B1 B2 D G H L P T MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.63 + 0.2 _ 0.65 + 0.2 1.27 0.20+0.1/-0.05 FLP-8 Marking Type Name KMB3D5PS 30QA 702 Lot No. Schottky Diode Maximum Ratings (Ta=25 CHARACTERISTIC Repetitive Peak Reverse Voltage Average Forward Current Unless otherwise noted) PATING 30 1.4 UNIT V A SYMBOL VRRM IF PIN CONNECTION (TOP VIEW) A A S G 1 8 C C D D 1 2 3 8 7 6 5 2 7 3 6 4 5 4 2007. 8. 13 Revision No : 2 1/5 KMB3D5PS30QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance Forward Transconductance Dynamic (Note 3) Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delat Time Turn-On Rise Time Turn-On Deley Time Turn-On Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage Note 1. Pulse Test : Pulse width 10 , Duty cycle 1% VSDF IDR=-1.7A, VGS=0V -1.2 V Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tr VDD=-10V, VGS=-10V ID=10 , RG=50 (Note 1) VDS=-10V, VGS=-10V, ID=-2.5A VDS=-10V, f=1MHz 550 210 50 8.7 1.9 1.3 7 9 14 8 ns nC pF BVDSS IDSS IGSS Vth RDS(ON) VGS=-4.5V, ID=-1.8A Gfs VDS=-10V, ID=-2.5A 125 5.0 180.0 S ID=-250 A, VGS=0V VDS=-30V, VGS=0V VGS= 20V, VDS=0V -30 -1.0 66 -1 100 -3.0 85.0 m V A nA V SYMBOL ) UNLESS OTHERWISE NOTED TEST CONDITION MIN. TYP. MAX. UNIT VDS=VGS, ID=-250 A VGS=-10.0V, ID=-2.5A SHOTTKY DIODE ELECTRICAL CHARACTERISTICS CHARACTERISTIC Forward Voltage Drop Reverse Leakage Current Junction Capactitance SYMBOL VF IR CT IF=1.0A VR=30V VR=10V TEST CONDITION MIN. TYP. 0.45 0.004 62 MAX. 0.5 0.1 UNIT V mA PF 2007. 8. 13 Revision No : 2 2/5 KMB3D5PS30QA Fig1. ID - VGS 20 10.0V 5.0V 4.5V 4.0V Fig2. RDS(on) - ID Drain Source On Resistance RDS(ON) () Common Source Tc=25 C Pulse Test 3.5V 0.4 0.32 0.24 0.16 Drain Current ID (A) 16 12 8 Common Source Tc=25 C Pulse Test VGS=3.0V VGS=4.5V 4 0 0 2 4 6 8 10 0.08 VGS=10V 0 0 3 6 9 12 Drain - Source Voltage VGS (V) Drain - Current ID (A) Fig3. ID - VGS 20 Common Source VDS=10V Pulse Test 25 C 125 C Fig4. RDS(on) - Tj 200 Common Source VDS=10V Pulse Test ID=2.5A Drain Source On Resistance RDS(ON) (m) Drain Current ID (A) 16 12 8 4 0 1 160 120 80 40 0 Tc=-55 C 2 3 4 5 -80 -40 0 40 80 120 160 Gate-Source Volatage VGS (V) Junction Temperature Tj ( C ) Fig5. Vth - Tj Reverse Source-Drain Current IDR (A) Gate Threshold Voltage Vth (V) 5 Common Source VGS=VDS ID=250A 4 Pulse Test Fig6. IDR - VSDF 10 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 Common Source Tc= 25 C Pulse Test 3 2 1 0 -80 -40 0 40 80 120 160 Junction Temperature Tj ( C ) Source - Drain Forward Voltage VSDF (V) 2007. 8. 13 Revision No : 2 3/5 KMB3D5PS30QA Fig7. Forward Voltage Drop 10 102 Fig8. Safe Operation Area Operation in this area is limited by RDS(ON) Forward Current IF (A) Drain Current ID (A) 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 101 1ms 100 10ms 100ms 10-1 VGS= 10V SINGLE PULSE Tj=25 C 1s 10s DC Tj=-50 C 10-2 10-1 100 101 102 103 Forward Voltage Drop VF (V) Drain - Source Voltage VDS (V) Fig9. Transient Thermal Response Curve Normalized Effective Transient Thermal Resistance 100 Duty Cycle = 0.5 0.2 10-1 PDM t1 t2 Duty Cycle D = t1/t2 Single Pluse 0.1 0.05 0.02 10-2 10-4 10-3 10-2 10-1 100 101 102 103 Square Wave Pulse Duration (sec) 2007. 8. 13 Revision No : 2 4/5 KMB3D5PS30QA Fig10. Gate Charge Circuit and Wave Form VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA VDS VGS Q Qgs Qgd Qg Fig11. Resistive Load Switching RL VDS 90% 0.5 VDSS 50 VDS 10 V VGS 10% td(on) td(off) VGS tr ton tf toff 2007. 8. 13 Revision No : 2 5/5 |
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